From molecules to opto-chips: organic electro-optic materials

被引:432
作者
Dalton, LR [1 ]
Steier, WH
Robinson, BH
Zhang, C
Ren, A
Garner, S
Chen, AT
Londergan, T
Irwin, L
Carlson, B
Fifield, L
Phelan, G
Kincaid, C
Amend, J
Jen, A
机构
[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[2] Univ So Calif, Loker Hydrocarbon Res Inst, Los Angeles, CA 90089 USA
[3] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA
[4] Northeastern Univ, Dept Chem, Boston, MA 02115 USA
关键词
D O I
10.1039/a902659b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recent advances in polymeric electro-optic materials and device fabrication techniques have significantly increased the potential for incorporation of these materials and devices into modern high bandwidth (fiber and wireless) telecommunication, information processing, and radar systems. Charge transfer pi-electron chromophores characterized by molecular first hyperpolarizability (second order optical non-linearity) values approaching 3000x10(-30) esu have been synthesized. Elucidation of the role of intermolecular electrostatic interactions in inhibiting the efficient translation of molecular optical non-linearity to macroscopic electro-optic activity has permitted systematic modification of materials to achieve electro-optic coefficients approaching 100 pm V-1. Improvements in the optical loss of polymeric materials at wavelengths of 1.3 and 1.55 mu m have been effected. Mode matching of passive transmission and active electro-optic waveguides has been addressed, permitting a dramatic reduction in insertion loss. The putative ability of polymeric electro-optic materials to be efficiently integrated with very large scale integration semiconductor electronic circuitry and with passive optical circuitry has been demonstrated. Several devices of varying degrees of complexity have been fabricated and evaluated to operational frequencies as high as 150 GHz. The operational stability of polymeric devices is very competitive with devices fabricated from lithium niobate and gallium arsenide.
引用
收藏
页码:1905 / 1920
页数:16
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