Systematic gate-controlled reentrant conductance of a superconductor-semiconductor two-dimensional electron gas junction

被引：23

作者：

Toyoda, E ^{[1
]}

Takayanagi, H ^{[1
]}

Nakano, H ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.59.R11653

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the temperature and voltage dependencies of the conductance in a superconductor-semiconductor two-dimensional electron gas (2DEG) junction with a gate. We observed the systematically controlled reentrant behavior of the conductance by using the gate to change diffusion constant of the 2DEG. We confirmed that the correlation energy of the proximity correction to the conductance is proportional to the diffusion constant of the normal part. We also examined the effect of the magnetic field on the reentrance and found that even a small magnetic field changed it drastically. [S0163-1829(99)50918-1].

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页码：R11653 / R11656

页数：4

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