TRANSPORT-PROPERTIES IN AN INAS-INSERTED-CHANNEL IN0.52AL0.48AS/IN0.53GA0.47AS HETEROSTRUCTURE COUPLED SUPERCONDUCTING JUNCTION

被引：77

作者：

NITTA, J ^{[1
]}

AKAZAKI, T ^{[1
]}

TAKAYANAGI, H ^{[1
]}

ARAI, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.46.14286

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Supercurrent is observed in a superconductor-semiconductor-superconductor (S-Sm-S) junction using a two-dimensional-electron-gas system in an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As heterostructure. The temperature dependence of the supercurrent cannot be explained by a simple exponential expression, but is here explained in terms of the clean-limit theory, taking account of the higher-order effect of the coherence length. The differential resistance of the junction shows clear subharmonic energy-gap structures due to multiple Andreev reflection since the phase coherence is maintained during the Andreev-reflection process. The Cooper pair transport explained by the clean-limit theory is attributed to the fact that the mean free path is longer than the coherence length and the length between the superconducting electrodes.

引用

页码：14286 / 14289

页数：4

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