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IMPROVED INALAS/INGAAS HEMT CHARACTERISTICS BY INSERTING AN INAS LAYER INTO THE INGAAS CHANNEL

被引：99
作者：
AKAZAKI, T
ARAI, K
ENOKI, T
ISHII, Y
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 06期
关键词：
D O I：
10.1109/55.145073
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel InAlAs/InGaAs HEMT with a thin InAs layer inserted into the InGaAs channel is proposed and its electron transport properties and device performances have been investigated. By optimizing the thickness and the exact point of insertion in the InAs layer, the mobility and electron velocity at 300 K have been increased by 30% and 15%, respectively, compared to the conventional heterostructure. In addition, a maximum intrinsic transconductance of 970 mS/mm and a maximum current gain cutoff frequency of 58.1 GHz have been attained by a 0.6-mu-m-gate-length device.
引用
收藏
页码：325 / 327
页数：3
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