STUDY OF THE CONSEQUENCE OF EXCESS INDIUM IN THE ACTIVE CHANNEL OF INGAAS/INALAS HIGH ELECTRON-MOBILITY TRANSISTORS ON DEVICE PROPERTIES

被引：22

作者：

NG, GI

PAVLIDIS, D

QUILLEC, M

CHAN, YJ

JAFFE, MD

SINGH, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.99361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：728 / 730

页数：3

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