Metamorphic PIN photodiodes for the 40 Gb/s fiber market

被引：4

作者：

Whelan, CS

Marsh, PF

Leoni, RE

Hunt, J

Grigas, A

Hoke, WE

Hwang, KC

Kazior, TE

Joshi, AM

Wang, X

机构：

来源：

GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001 | 2001年

关键词：

D O I：

10.1109/GAAS.2001.964388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed metamorphic PIN diodes that absorb at 1.55 mum wavelength light were fabricated on a GaAs substrate. The In0.53GaAs-based top-illuminated structure showed a low, stable dark current of 7 nA at 10 V reverse bias. The packaged diode demonstrated a -3 dB bandwidth of 52 GHz and 0.52 A/W responsivity. This state-of-the-art diode fabricated on a highly manufacturable GaAs substrate is clearly suitable for the 40 Gbit/s fiber optic telecommunication market, and opens the door for metamorphic OEICs.

引用

页码：251 / 254

页数：4

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