Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates

被引：37

作者：

Jang, JH ^{[1
]}

Cueva, G

Dumka, DC

Hoke, WE

Lemonias, PJ

Adesida, I

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA

[2] Raytheon Co, RF Components, Andover, MA 01910 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 02期

关键词：

dark current; GaAs; In0.53Ga0.47As; long wave-lengths; metamorphic p-i-n photodiode; optical communication;

D O I：

10.1109/68.910518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metamorphic In0.53Ga0.47As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-mum-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40 x 10(-4)A/cm(2). Typical responsivity measured with 1.55-mum optical radiation was 0.55 A/W, corresponding to an external quantum efficiency of 44%. The electrical 3-dB bandwidths of the photodiodes with diameters smaller than 20 mum were over 20 GHz.

引用

页码：151 / 153

页数：3

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