10Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs

被引：14

作者：

Hurm, V ^{[1
]}

Benz, W ^{[1
]}

Bronner, W ^{[1
]}

Dammann, M ^{[1
]}

Jakobus, T ^{[1
]}

Kaufel, G ^{[1
]}

Kohler, K ^{[1
]}

Lao, Z ^{[1
]}

Ludwig, M ^{[1
]}

Raynor, B ^{[1
]}

Rosenzweig, J ^{[1
]}

Schlechtweg, M ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 19期

关键词：

high electron mobility transistors; gallium arsenide;

D O I：

10.1049/el:19971072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first long wavelength pin-HEMT photoreceiver grown on GaAs has been manufactured using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.55 mu m the monolithically integrated InGaAs pin photodiode has a responsivity of 0.40A/W, and the photoreceiver has a -3dB bandwidth of 6.9GHz. Clear and open eye diagrams for a 10Gbit/s 1.5 mu m optical data stream have been demonstrated.

引用

页码：1653 / 1654

页数：2

共 5 条

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