Growth of high quality Al0.48In0.52As/Ga0.47In0.53As heterostructures using strain relaxed AlxGayIn1-x-yAs buffer layers on GaAs

被引:41
作者
Haupt, M
Kohler, K
Ganser, P
Emminger, S
Muller, S
Rothemund, W
机构
[1] Fraunhofer-Inst. F. Angew. F., D-79108 Freiburg
关键词
D O I
10.1063/1.118078
中图分类号
O59 [应用物理学];
学科分类号
摘要
Morphological and physical properties of Al0.48In0.52As/Ga(0.47)In(0.53)AS heterostructures grown by molecular beam epitaxy, lattice relaxed on GaAs substrates and lattice matched on InP substrates, are presented. Both a quaternary linear and step graded lattice relaxed buffer concept is implemented to accomodate the lattice mismatch between the GaAs substrate and the Al0.48In0.52As/Ga0.47In0.53As layer sequence. The surface morphology and the transport properties of Al0.48In0.52As/Ga0.47In0.53As high electron mobility transistor structures were studied by atomic force microscopy and Hall effect measurements, respectively. Optical properties were investigated by low temperature photoluminescence experiments on quantum well structures. The linear graded buffer approach was found to result in superior heterostructure properties due to the two dimensional growth mode during the whole growth process resulting in the typical cross hatched surface morphology. In contrast, the use of step graded buffer layers resulted in three dimensional layer growth and inferior layer quality. However, by increasing the number of steps, i.e., reducing the change in the lattice constant for each step and thus approaching a linear grading, two dimensional growth is recovered. (C) 1996 American Institute of Physics.
引用
收藏
页码:412 / 414
页数:3
相关论文
共 9 条
[1]   MODULATION-DOPED IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS BY STEP GRADING [J].
CHEN, JH ;
FERNANDEZ, JM ;
CHANG, JCP ;
KAVANAGH, KL ;
WIEDER, HH .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (04) :601-603
[2]   PROCESS TECHNOLOGY FOR INGAAS/INALAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS ON INP SUBSTRATES [J].
FINK, T ;
RAYNOR, B ;
HAUPT, M ;
KOHLER, K ;
BRAUNSTEIN, J ;
GRUN, N ;
HORNUNG, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06) :3332-3336
[3]   DISLOCATION BEHAVIOR AT HETEROINTERFACES IN III-V SEMICONDUCTORS [J].
GOODHEW, PJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1994, 55 (10) :1107-1114
[4]  
LORD SM, 1993, J CRYST GROWTH, V127, P749
[5]   IN0.5GA0.5AS/INALAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS ON GAAS SUBSTRATES GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].
MASATO, H ;
MATSUNO, T ;
INOUE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3850-3852
[6]   OPTICAL-PROPERTIES OF HIGH-QUALITY INALAS/INGAAS SQWS GROWN BY MBE USING SPECIALLY REFINED IN AND AL SOURCES [J].
MISHIMA, T ;
KASAI, J ;
UCHIDA, Y ;
TAKAHASHI, S .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :338-342
[7]  
MISHIMA T, 1994, 8 INT C MOL BEAM EPI, P430
[8]   PRINCIPLE DIFFERENCES BETWEEN THE TRANSPORT-PROPERTIES OF NORMAL ALGAAS/INGAAS/GAAS AND INVERTED GAAS/INGAAS/ALGAAS MODULATION DOPED HETEROSTRUCTURES [J].
SCHWEIZER, T ;
KOHLER, K ;
GANSER, P .
APPLIED PHYSICS LETTERS, 1992, 60 (04) :469-471
[9]   THE INTERFACIAL MORPHOLOGY OF STRAINED EPITAXIAL INXGA1-XAS/GAAS [J].
YAO, JY ;
ANDERSSON, TG ;
DUNLOP, GL .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2224-2230