PROCESS TECHNOLOGY FOR INGAAS/INALAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS ON INP SUBSTRATES

被引：8

作者：

FINK, T

RAYNOR, B

HAUPT, M

KOHLER, K

BRAUNSTEIN, J

GRUN, N

HORNUNG, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3332 / 3336

页数：5

共 14 条

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