ALAS ETCH-STOP LAYERS FOR INGAALAS/INP HETEROSTRUCTURE DEVICES AND CIRCUITS

被引：27

作者：

BROEKAERT, TPE ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.123474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wet chemical etching solutions have been developed that allow the selective etching of InP lattice-matched InGaAs and InAlAs compounds using thin pseudomorphic AlAs layers as etch stops. Several dicarboxylic acids were found that enable the etching of indium compounds. The best results have been obtained for etchants consisting of succinic acid, ammonia, and hydrogen peroxide. The etch rate of In0.53Ga0.47As is found to be over 1000 times the etch rate of AlAs, while the etch rate of In0.52Al0.48As is over 500 times that of the AlAs. The dependences of the succinic acid based etch on pH and hydrogen peroxide concentration were also studied. Buffered HF can be used to remove the AlAs stop layer, while it does not etch InGaAlAs to any significant degree.

引用

页码：533 / 536

页数：4

共 19 条

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