A PROPOSED NARROW-BAND-GAP BASE TRANSISTOR STRUCTURE

[1] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[2] RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 636 - 638

[3] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[4] DEPENDENCE OF TUNNELING CURRENT ON STRUCTURAL VARIATIONS OF SUPERLATTICE DEVICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 167 - 168

[5] NOVEL HIGH-SPEED TRANSISTOR BASED ON CHARGE EMISSION FROM A QUANTUM WELL [J]. APPLIED PHYSICS LETTERS, 1988, 52 (11) : 904 - 906

[6] EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5428 - 5432

[7] ROOM-TEMPERATURE OPERATION OF UNIPOLAR HOT-ELECTRON TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 625 - 628

[8] AN INDUCED BASE HOT-ELECTRON TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 178 - 180

[9] QUANTUM CAPACITANCE DEVICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 501 - 503

[10] MAINS RK, J APPLIED PHYSICS

[1] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[2] RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 636 - 638

[3] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[4] DEPENDENCE OF TUNNELING CURRENT ON STRUCTURAL VARIATIONS OF SUPERLATTICE DEVICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 167 - 168

[5] NOVEL HIGH-SPEED TRANSISTOR BASED ON CHARGE EMISSION FROM A QUANTUM WELL [J]. APPLIED PHYSICS LETTERS, 1988, 52 (11) : 904 - 906

[6] EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5428 - 5432

[7] ROOM-TEMPERATURE OPERATION OF UNIPOLAR HOT-ELECTRON TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 625 - 628

[8] AN INDUCED BASE HOT-ELECTRON TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 178 - 180

[9] QUANTUM CAPACITANCE DEVICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 501 - 503

[10] MAINS RK, J APPLIED PHYSICS