AN INDUCED BASE HOT-ELECTRON TRANSISTOR

被引：38

作者：

LURYI, S

机构：

来源：

关键词：

D O I：

10.1109/EDL.1985.26088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：178 / 180

页数：3

共 24 条

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY
ALLYN, CL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376
[2] ATALLA MM, 1962, JUL P IRE AIEE SOL S
[3] QUANTUM-MECHANICAL REFLECTION OF ELECTRONS AT METAL-SEMICONDUCTOR BARRIERS - ELECTRON TRANSPORT IN SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES
CROWELL, CR
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2683 - &
[4] GALITSKII VM, 1981, PROBLEM BOOK QUANTUM
[5] GEPPERT DV, 1962, P IRE, V50, P1527
[6] MOLECULAR-BEAM EPITAXIAL-GROWTH AND ELECTRICAL TRANSPORT OF GRADED BARRIERS FOR NON-LINEAR CURRENT CONDUCTION
GOSSARD, AC
BROWN, W
ALLYN, CL
WEIGMANN, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 694 - 700
[7] BIPOLAR-TRANSISTOR WITH GRADED BAND-GAP BASE
HAYES, JR
CAPASSO, F
GOSSARD, AC
MALIK, RJ
WIEGMANN, W
[J]. ELECTRONICS LETTERS, 1983, 19 (11) : 410 - 411
[8] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES
KAZARINOV, RF
LURYI, S
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 810 - 812
[9] KAZARINOV RF, 1982, APPL PHYS A-MATER, V28, P151, DOI 10.1007/BF00617980
[10] Kroemer H., 1957, RCA REV, V18, P332