ROOM-TEMPERATURE OPERATION OF UNIPOLAR HOT-ELECTRON TRANSISTORS

被引：8

作者：

LEVI, AFJ ^{[1
]}

CHIU, TH ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

D O I：

10.1016/0038-1101(88)90356-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：625 / 628

页数：4

相关论文

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[7] CORRECTION
LEVI, AFJ
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[8] ROOM-TEMPERATURE OPERATION OF HOT-ELECTRON TRANSISTORS
LEVI, AFJ
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 984 - 986
[9] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 42 - 44
[10] LEVI AFJ, 1987, UNPUB