ELECTRON-TRANSPORT OF (AL, GA)SB/INAS HETEROJUNCTIONS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

CHIU, TH ^{[1
]}

TSANG, WT ^{[1
]}

LEVI, AFJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 17期

关键词：

ELECTRONS - Transport Properties - MOLECULAR BEAM EPITAXY - SEMICONDUCTOR MATERIALS;

D O I：

10.1049/el:19870648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular beam epitaxial growth of (Al, Ga)Sb/InAs heterostructures is described. Electron transport studies indicate that these heterojunctions are of high quality. Shubnikov-de Haas measurement of the AlSb/InAs/GaSb quantum well shows a two-dimensional electron gas of concentration 2 multiplied by 10 **1**2 cm** minus **2 and a low-temperature mobility approaching 10**5 cm**2/Vs. Low-temperature capacitance/voltage measurement indicates that the thin AlSb barrier is a classical Mott-type barrier.

引用

页码：917 / 919

页数：3

共 8 条

[1] HOT-ELECTRON SPECTROSCOPY OF GAAS [J].