QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC

[1] Bate R. T., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P26, DOI 10.1117/12.940817

[2] CONTINUUM-MINIBAND SUPERLATTICE-BASE TRANSISTOR WITH GRADED-GAP ELECTRON INJECTOR [J]. ELECTRONICS LETTERS, 1989, 25 (18) : 1219 - 1220

[3] NEGATIVE TRANSCONDUCTANCE VIA GATING OF THE QUANTUM WELL SUBBANDS IN A RESONANT TUNNELING TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 219 - 221

[4] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[5] RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 636 - 638

[6] CHARGE COUPLED SEMICONDUCTOR DEVICES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +

[7] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1545 - 1547

[8] BROWN ER, UNPUB APPL PHYS LETT

[9] BROWN ER, 1989, P SPIE INT SOC OPT E, V943, P2

[10] NEGATIVE TRANSCONDUCTANCE RESONANT TUNNELING FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 526 - 528

[1] Bate R. T., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P26, DOI 10.1117/12.940817

[2] CONTINUUM-MINIBAND SUPERLATTICE-BASE TRANSISTOR WITH GRADED-GAP ELECTRON INJECTOR [J]. ELECTRONICS LETTERS, 1989, 25 (18) : 1219 - 1220

[3] NEGATIVE TRANSCONDUCTANCE VIA GATING OF THE QUANTUM WELL SUBBANDS IN A RESONANT TUNNELING TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 219 - 221

[4] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[5] RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 636 - 638

[6] CHARGE COUPLED SEMICONDUCTOR DEVICES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +

[7] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1545 - 1547

[8] BROWN ER, UNPUB APPL PHYS LETT

[9] BROWN ER, 1989, P SPIE INT SOC OPT E, V943, P2

[10] NEGATIVE TRANSCONDUCTANCE RESONANT TUNNELING FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 526 - 528