NEGATIVE TRANSCONDUCTANCE RESONANT TUNNELING FIELD-EFFECT TRANSISTOR

被引：18

作者：

CAPASSO, F

SEN, S

CHO, AY

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.98387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：526 / 528

页数：3

共 10 条

[1] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J].

BONNEFOI, AR ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :888-890

[2] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].

CAPASSO, F ;

KIEHL, RA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1366-1368

[3] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].

CAPASSO, F ;

SEN, S ;

GOSSARD, AC ;

HUTCHINSON, AL ;

ENGLISH, JH .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :573-576

[4] RESONANT TUNNELING IN MAGNETIC-FIELDS - EVIDENCE FOR SPACE-CHARGE BUILDUP [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW B, 1987, 35 (17) :9387-9390

[5] A FIELD-EFFECT TRANSISTOR WITH A NEGATIVE DIFFERENTIAL RESISTANCE [J].

KASTALSKY, A ;

LURYI, S ;

GOSSARD, AC ;

HENDEL, R .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :57-60

[6] HOT-ELECTRON INJECTION DEVICES [J].

LURYI, S ;

KASTALSKY, A .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (05) :389-400

[7] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J].

LURYI, S ;

CAPASSO, F .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1347-1349

[8]

LURYI S, 1986, APPL PHYS LETT, V48, P1693, DOI 10.1063/1.97043

[9] EXPERIMENTAL REALIZATION OF A RESONANT TUNNELING TRANSISTOR [J].

WOODWARD, TK ;

MCGILL, TC ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1987, 50 (08) :451-453

[10]

YOKOYAMA N, 1985, JAPAN J APPL PHYS 2, V24, pL583

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