EXPERIMENTAL REALIZATION OF A RESONANT TUNNELING TRANSISTOR

[1] BHARTIA P, 1984, MILLIMETER WAVE ENG, pCH3

[2] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[3] RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 636 - 638

[4] OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 344 - 346

[5] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[6] ROOM-TEMPERATURE OSCILLATIONS IN A SUPERLATTICE STRUCTURE [J]. ELECTRONICS LETTERS, 1986, 22 (03) : 131 - 133

[7] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[8] SHORT-CHANNEL EFFECTS IN 0.5-MU-M SOURCE-DRAIN SPACED VERTICAL GAAS-FETS - A 1ST EXPERIMENTAL INVESTIGATION [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 125 - 127

[9] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : R31 - R55

[10] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 490 - 492

[1] BHARTIA P, 1984, MILLIMETER WAVE ENG, pCH3

[2] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[3] RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 636 - 638

[4] OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 344 - 346

[5] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[6] ROOM-TEMPERATURE OSCILLATIONS IN A SUPERLATTICE STRUCTURE [J]. ELECTRONICS LETTERS, 1986, 22 (03) : 131 - 133

[7] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[8] SHORT-CHANNEL EFFECTS IN 0.5-MU-M SOURCE-DRAIN SPACED VERTICAL GAAS-FETS - A 1ST EXPERIMENTAL INVESTIGATION [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 125 - 127

[9] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : R31 - R55

[10] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 490 - 492