A FIELD-EFFECT TRANSISTOR WITH A NEGATIVE DIFFERENTIAL RESISTANCE

被引:54
作者
KASTALSKY, A
LURYI, S
GOSSARD, AC
HENDEL, R
机构
关键词
D O I
10.1109/EDL.1984.25831
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:57 / 60
页数:4
相关论文
共 6 条
[1]   NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J].
ALLYN, CL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1980, 36 (05) :373-376
[2]   NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES [J].
KASTALSKY, A ;
LURYI, S .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :334-336
[3]  
KAZARINOV RF, 1982, APPL PHYS A-MATER, V28, P151, DOI 10.1007/BF00617980
[4]  
KIEHL R, UNPUB MICROWAVE GENE
[5]   ON THE THEORY OF THE THERMIONIC EMISSION TRANSISTOR .2. TET AS AN ELEMENT OF LOGIC-CIRCUITS [J].
LURYI, S ;
KAZARINOV, RF .
SOLID-STATE ELECTRONICS, 1982, 25 (09) :933-942
[6]  
LURYI S, UNPUB CHARGE INJECTI