NEGATIVE TRANSCONDUCTANCE VIA GATING OF THE QUANTUM WELL SUBBANDS IN A RESONANT TUNNELING TRANSISTOR

[1] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[2] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[3] Capasso F., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P112

[4] RESONANT TUNNELING GATE FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1987, 23 (05) : 225 - 226

[5] LURY S, 1987, HETEROJUNCTION BAND, pCH12

[6] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1347 - 1349

[7] QUANTUM CAPACITANCE DEVICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 501 - 503

[8] LURYI S, 1986, APPL PHYS LETT, V48, P1693, DOI 10.1063/1.97043

[9] BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (22) : 2173 - 2176

[10] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[1] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[2] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[3] Capasso F., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P112

[4] RESONANT TUNNELING GATE FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1987, 23 (05) : 225 - 226

[5] LURY S, 1987, HETEROJUNCTION BAND, pCH12

[6] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1347 - 1349

[7] QUANTUM CAPACITANCE DEVICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 501 - 503

[8] LURYI S, 1986, APPL PHYS LETT, V48, P1693, DOI 10.1063/1.97043

[9] BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (22) : 2173 - 2176

[10] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &