RESONANT TUNNELING GATE FIELD-EFFECT TRANSISTOR

[1] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 573 - 576

[2] HOT-ELECTRON INJECTION DEVICES [J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (05) : 389 - 400

[3] ROOM-TEMPERATURE OBSERVATION OF DIFFERENTIAL NEGATIVE-RESISTANCE IN AN ALAS/GAAS/ALAS RESONANT TUNNELING DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L466 - L468

[4] Yokoyama N., 1985, JPN J APPL PHYS, V24, pL583

[1] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 573 - 576

[2] HOT-ELECTRON INJECTION DEVICES [J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (05) : 389 - 400

[3] ROOM-TEMPERATURE OBSERVATION OF DIFFERENTIAL NEGATIVE-RESISTANCE IN AN ALAS/GAAS/ALAS RESONANT TUNNELING DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L466 - L468

[4] Yokoyama N., 1985, JPN J APPL PHYS, V24, pL583