SELECTIVE ETCHING OF INP AND INGAASP OVER ALINAS USING CH4/H2 REACTIVE ION ETCHING

被引：17

作者：

ARNOT, HEG ^{[1
]}

GLEW, RW ^{[1
]}

SCHIAVINI, G ^{[1
]}

RIGBY, LJ ^{[1
]}

PICCIRILLO, A ^{[1
]}

机构：

[1] BNR EUROPE,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective etching of InP and InGaAsP over AlInAs was obtained using CH4/H-2 reactive ion etching without the addition of a fluorine containing gas. By tuning the methane-to-hydrogen ratio, pressure, and power, sputter desorption of the reacted AlInAs etch products can be inhibited, thus enabling AlInAs to be used as an etch stop layer. The use of a fluorine free mixture enables dielectrics such as silicon dioxide or nitride to be used as the masking material.

引用

页码：3189 / 3191

页数：3

共 7 条

[1]

AGRAWAL N, 1992, 18TH P EUR C OPT COM, P213

[2] NOVEL AIINAS/INP HEMT [J].