REACTIVE ION ETCHING OF INP, INGAAS, INALAS - COMPARISON OF C2H6/H-2 WITH CCL2F2/O-2

被引：53

作者：

PEARTON, SJ ^{[1
]}

HOBSON, WS ^{[1
]}

BAIOCCHI, FA ^{[1
]}

EMERSON, AB ^{[1
]}

JONES, KS ^{[1
]}

机构：

[1] UNIV FLORIDA,GAINESVILLE,FL 32611

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.584866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：57 / 67

页数：11

共 28 条

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[7] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537
[8] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 23 - 30
[9] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150
[10] GOTTSCHO RA, 1983, J APPL PHYS, V54, P6663

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