PASSIVATION OF DONORS IN ELECTRON-BEAM LITHOGRAPHICALLY DEFINED NANOSTRUCTURES AFTER METHANE HYDROGEN REACTIVE ION ETCHING

被引：60

作者：

CHEUNG, R

THOMAS, S

MCINTYRE, I

WILKINSON, CDW

BEAUMONT, SP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1911 / 1915

页数：5

共 15 条

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[7] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS
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[8] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS
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[9] FABRICATION OF 20-NM STRUCTURES IN GAAS
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 410 - 412
[10] REACTIVE ION ETCHING OF GAAS AND INP USING SICL4
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1053 - 1055