FABRICATION OF 20-NM STRUCTURES IN GAAS

被引：45

作者：

STERN, MB

CRAIGHEAD, HG

LIAO, PF

MANKIEWICH, PM

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

[2] BELL COMMUN RES,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：410 / 412

页数：3

共 8 条

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[2]

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[3]

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[4]

HOWARD RE, 1982, VLSI ELECTRONICS MIC, V5

[5] LATERAL (TWO-DIMENSIONAL) SUPER-LATTICES - QUANTUM-WELL CONFINEMENT AND CHARGE INSTABILITIES [J].

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REICH, RK .

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[6] RAMAN-SCATTERING FROM SMALL PARTICLE-SIZE POLYCRYSTALLINE SILICON [J].

IQBAL, Z ;

VEPREK, S ;

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SOLID STATE COMMUNICATIONS, 1981, 37 (12) :993-996

[7]

MANKIEWICH PM, UNPUB

[8] REACTIVE ION ETCHING OF GAAS AND INP USING SICL4 [J].

STERN, MB ;

LIAO, PF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1053-1055

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