BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING

被引：168

作者：

FLAMM, DL

DONNELLY, VM

IBBOTSON, DE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 01期

关键词：

PLASMAS; -; Applications;

D O I：

10.1116/1.582536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A recent review of plasma etching is extended with discussions of similarity variables governing discharges, anisotropic oxide etching in fluorine and unsaturate-rich plasmas, surface texture, the loading effect, and gas-surface reactions.

引用

页码：23 / 30

页数：8

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