OPTICAL-PROPERTIES OF HIGH-QUALITY INALAS/INGAAS SQWS GROWN BY MBE USING SPECIALLY REFINED IN AND AL SOURCES

被引：15

作者：

MISHIMA, T

KASAI, J

UCHIDA, Y

TAKAHASHI, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90413-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：338 / 342

页数：5

共 9 条

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[4]

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[5] EXTREMELY HIGH-QUALITY GAINAS/A1INAS SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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ELECTRONICS LETTERS, 1987, 23 (14) :761-763

[6] LOW-TEMPERATURE MBE GROWTH OF HIGH-QUALITY ALGAAS [J].

SHIRAKI, Y ;

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MORIOKA, M .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :164-168

[7] OPTICAL AND STRUCTURAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GA0.47IN0.53AS/AL0.48IN0.52AS SUPERLATTICES, EMITTING AT 1.55 MU-M AT ROOM-TEMPERATURE [J].

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (02) :97-102

[8] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY [J].

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[9]

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