EXTREMELY HIGH-QUALITY GAINAS/A1INAS SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

SCOTT, EG

DAVEY, ST

DAVIES, GJ

机构：

[1] British Telecom Research Lab, Ipswich, Engl, British Telecom Research Lab, Ipswich, Engl

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 14期

关键词：

D O I：

10.1049/el:19870539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTING GALLIUM COMPOUNDS

引用

页码：761 / 763

页数：3

共 10 条

[1] INTERDIGITATED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (01) :99-101

[2] THE GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED AL1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

KERR, T ;

TUPPEN, CG ;

WAKEFIELD, B ;

ANDREWS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :219-223

[3] MICROWAVE CHARACTERIZATION OF 1-MU-M-GATE AL0.48IN0.52AS/GA0.47IN0.53AS/INP MODFETS [J].

PALMATEER, LF ;

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ITOH, T ;

BROWN, AS ;

WICKS, GW ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1987, 23 (01) :53-55

[4]

SCOTT EG, IN PRESS J APPL PHYS

[5] ROLE OF INTERFACE ROUGHNESS AND ALLOY DISORDER IN PHOTOLUMINESCENCE IN QUANTUM-WELL STRUCTURES [J].

SINGH, J ;

BAJAJ, KK .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5433-5437

[6] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

ALAVI, K ;

WAGNER, WR ;

PEARSALL, TP ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :845-847

[7] CHEMICAL BEAM EPITAXIAL-GROWTH OF VERY LOW THRESHOLD GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM WELL LASERS [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1010-1012

[8] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

SCHUBERT, EF .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :220-222

[9]

TUPPEN CG, IN PRESS J CRYST GRO

[10]

WELSH DF, 1985, APPL PHYS LETT, V46, P991

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