COMPOSITION DEPENDENCE OF EQUAL THICKNESS FRINGES IN AN ELECTRON-MICROSCOPE IMAGE OF GAAS/ALXGA1-XAS MULTILAYER STRUCTURE

被引：86

作者：

KAKIBAYASHI, H

NAGATA, F

机构：

[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 12期

关键词：

D O I：

10.1143/JJAP.24.L905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L905 / L907

页数：3

共 6 条

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L85 - L88
[2] STRUCTURE-ANALYSIS OF OVAL DEFECT ON MOLECULAR-BEAM EPITAXIAL GAAS LAYER BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L846 - L848
[3] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR
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VIEGERS, MPA
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 431 - 436
[4] DIRECT OBSERVATION OF LATTICE ARRANGEMENT IN MBE GROWN GAAS-ALGAAS SUPER-LATTICES
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L367 - L369
[5] REIMER L, 1984, SPRINGER SERIES OPTI, V36
[6] UYEDA R, 1965, JPN J APPL PHYS, V7, P498