Emission of secondary particles from metals and insulators at impact of slow highly charged ions

被引：47

作者：

Schenkel, T ^{[1
]}

Barnes, AV ^{[1
]}

Briere, MA ^{[1
]}

Hamza, A ^{[1
]}

vonWittenau, AS ^{[1
]}

Schneider, DH ^{[1
]}

机构：

[1] UNIV FRANKFURT,INST KERNPHYS,D-60486 FRANKFURT,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 125卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(96)00930-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The emission of secondary electrons and ions from clean Au, CxHy-Au and SiO2 surfaces at impact of slow (upsilon approximate to 0.3 upsilon(Bohr)) ions has been measured as a function of incident ion charge for 1 + less than or equal to q less than or equal to 75 +. Electron yields from thermal silicon dioxide films (150 nm on Si) are found to be lower than those from Au and CxHy-Au for q > 3 +. Yields of negative secondary ions from SiO2 and CxHy-Au were recorded in parallel with electron emission data and exhibit a q(n), n approximate to 4, dependency on incident ion charge. A direct comparison of collisional and electronic contributions to secondary ion production from SiO2 films using a beam of charge state equilibrated Xe-q=qeq (at 2.75 keV/u) shows positive and negative secondary ion yield increases with incident ion charge of > 400. Results are discussed in relation to key signatures of electronic sputtering by Coulomb explosions.

引用

页码：153 / 158

页数：6

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