Mott-Schottky analysis of nanometer-scale thin-film anatase TiO2

被引：168

作者：

vandeKrol, R

Goossens, A

Schoonman, J

机构：

[1] Lab. for Applied Inorganic Chemistry, Delft University of Technology

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 05期

关键词：

D O I：

10.1149/1.1837668

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Smooth nanometer-scale films of anatase TiO2 on indium-tin oxide substrates (ITO) are obtained by electron-beam evaporation of reduced TiO2 powder. Mott-Schottky analysis shows an abrupt change in slope when the depletion layer reaches the TiO2/ITO interface. An electrostatic model is derived, which gives a quantitative description of the observed change in slope. From the potential at which the slope changes, the dielectric constant of anatase could be accurately determined. A value of 55 is found, which is significantly lower than those reported for anatase TiO2.

引用

页码：1723 / 1727

页数：5

共 24 条

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