Simple approach to include external resistances in the Monte Carlo simulation of MESFET's and HEMT's

The contact and external series resistances play an important role in the performance of modern 0.1-0.2-mu m HEMT's. It is dot possible to include these resistances directly into the Monte Carlo simulations, In this letter we describe a simple and efficient may to include the external series resistances into the Monte Carlo results of the intrinsic device simulations. Example of simulation results are given for a 0.2-mu m pseudomorphic-HEMT.