Self-aligned amorphous-silicon TFTs on clear plastic substrates

被引:16
作者
Cheng, IC [1 ]
Kattamis, AZ
Long, K
Sturm, JC
Wagner, S
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Princeton Univ, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA
关键词
amorphous-silicon (a-Si : H); plastic substrates; thin-film transistors (TFTs); self-aligned process;
D O I
10.1109/LED.2006.870247
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated the first bottom-gate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a clear plastic substrate with source and drain self-aligned to the gate. The top source and drain are self-aligned to the bottom gate by backside exposure photolithography through the plastic substrate and the TFT tri-layer. The a-Si:H channel in the tri-layer is made only 30 nm thick to ensure high optical transparency at the exposure wavelength of 405 urn. The TFTs have a threshold voltage of similar to 3 V, subthreshold slope of similar to 0.5 V/dec, linear mobility of similar to 1 cm(2)V(-1) s(-1) saturation mobility of similar to 0.8 cm(2)V(-1) s(-1), and on/off current ratio of > 10(6). These results show that self-alignment by backside exposure provides a solution to the fundamental challenge of making electronics on plastics: overlay misalignment.
引用
收藏
页码:166 / 168
页数:3
相关论文
共 12 条
[1]   Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates [J].
Cheng, IC ;
Kattamis, A ;
Long, K ;
Sturm, JC ;
Wagner, S .
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2005, 13 (07) :563-568
[2]  
Constant A., 1995, Proceedings of the Second Symposium on Thin Film Transistor Technologies, P392
[3]   150°C amorphous silicon thin-film transistor technology for polyimide substrates [J].
Gleskova, H ;
Wagner, S ;
Gasparík, V ;
Kovác, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (07) :G370-G374
[4]   Spherical deformation of compliant substrates with semiconductor device islands [J].
Hsu, PI ;
Huang, M ;
Xi, Z ;
Wagner, S ;
Suo, Z ;
Sturm, JC .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) :705-712
[5]   Flexible electronics and displays: High-resolution, roll-to-roll, projection lithography and photoablation processing technologies for high-throughput production [J].
Jain, K ;
Klosner, M ;
Zemel, M ;
Raghunandan, S .
PROCEEDINGS OF THE IEEE, 2005, 93 (08) :1500-1510
[6]  
KATTAMIS A, 2005, P 47 ANN TMS EL MAT, P73
[7]   A SELF-ALIGNED, TRILAYER, A-SIH THIN-FILM TRANSISTOR PREPARED FROM 2 PHOTOMASKS [J].
KUO, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (04) :1199-1204
[8]   High-performance TFTs fabricated on plastic substrates [J].
Lemmi, F ;
Chung, W ;
Lin, S ;
Smith, PM ;
Sasagawa, T ;
Drews, BC ;
Hua, A ;
Stern, JR ;
Chen, JY .
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) :486-488
[9]   Mechanics of rollable and foldable film-on-foil electronics [J].
Suo, Z ;
Ma, EY ;
Gleskova, H ;
Wagner, S .
APPLIED PHYSICS LETTERS, 1999, 74 (08) :1177-1179
[10]   Fully self-aligned tri-layer a-Si:H thin-film transistors with deposited doped contact layer [J].
Thomasson, DB ;
Jackson, TN .
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (04) :124-126