High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte

被引：79

作者：

Takeya, J ^{[1
]}

Yamada, K

Hara, K

Shigeto, K

Tsukagoshi, K

Ikehata, S

Aoyagi, Y

机构：

[1] CRIEPI, Mat Sci Res Lab, Tokyo 2018511, Japan

[2] RIKEN, Wako, Saitama 3510198, Japan

[3] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan

[4] Japan Sci & Technol Corp, PRESTO, Kawaguchi 3330012, Japan

[5] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan

[6] Tokyo Inst Technol, Yokohama, Kanagawa 3368502, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.2186513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-density carrier accumulation in organic semiconductors is demonstrated in Au/polymer gel electrolyte/rubrene crystal/SiO2/doped Si dual-gate transistors, forming electric double layers in the polymer gel. Application of only 1.2 V across the polymer gel electrolyte drastically enhances the conductance of the rubrene single crystal with the field-induced carrier density up to similar to 5x10(13) cm(-2). Directly comparing the transfer characteristics of the same device channel in the dual-gate transistors revealed that the achieved doping level is beyond the maximum of the SiO2-based transistor on the opposite side of the organic crystal. (c) 2006 American Institute of Physics.

引用

页数：3

共 22 条

[1] Dual-gate pentacene organic field-effect transistors based on a nanoassembled SiO2 nanoparticle thin film as the gate dielectric layer -: art. no. 064102 [J].