Dual-gate organic thin-film transistors

被引：88

作者：

Gelinck, GH

van Veenendaal, E

Coehoorn, R

机构：

[1] Philips Technol Incubator, Polymer Vis, NL-5656 AE Eindhoven, Netherlands

[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.2031933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A dual-gate organic thin-film transistor is realized using solution-processed organic semiconductor and insulator layers. Electrodes are made from gold. Compared to conventional single-gate transistors, this device type has a higher on current and steeper subthreshold slope. We show that the improved performance is the result of a nonconstant threshold voltage rather than formation of a second accumulation channel. Formation of a second accumulation channel does occur but the field-effect mobility associated with this channel is a factor 10(4) lower than the primary channel due to the relatively rough insulator-semiconductor interface. (C) 2005 American Institute of Physics.

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页数：3

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