Pressure and temperature dependence of Raman spectra and their anharmonic effects in Bi2Se3 single crystal

被引：24

作者：

Deshpande, M. P. ^{[1
]}

Bhatt, Sandip V. ^{[1
]}

Sathe, Vasant ^{[2
]}

Rao, Rekha ^{[3
]}

Chaki, S. H. ^{[1
]}

机构：

[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India

[2] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India

[3] Bhabha Atom Res Ctr, Div Solid State Phys, Bombay 400085, Maharashtra, India

来源：

PHYSICA B-CONDENSED MATTER | 2014年 / 433卷

关键词：

Bi2Se3 single crystal; High pressure; Low temperature; Anharmonic effects; OPTICAL-PROPERTIES; PHONONS; SB2TE3; GROWTH; BI2TE3; SB2SE3;

D O I：

10.1016/j.physb.2013.10.008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report here on Raman spectroscopic studies of Bi2Se3 single crystal synthesized by chemical vapor transport technique as a function of pressure (0-12 GPa) and temperature (80-300 K). Polarized Raman experiments in the back-scattering configuration were performed to determine the position of the two dominant first-order Raman-active modes, E-g(4) and A(1g)(2) at around 132 and 174 cm(-1) respectively. High pressure Raman measurements provides the evidence that Bi2Se3 single crystal undergoes first order phase transition above 10 GPa. Isobaric and isothermal mode Gruneisen parameter have been determined from the temperature and pressure dependent Raman spectra for both Raman active modes of Bi2Se3 single crystal. The analysis of the experimental data showed that the temperature dependencies of the phonon frequencies and linewidths were well described by considering the contributions from thermal expansion and lattice anharmonicity. (C) 2013 Elsevier B.V. All rights reserved

引用

页码：72 / 78

页数：7

共 42 条

[1] Density of states effective mass of SnBi4Se7 deduced from the temperature dependence of electrical conductivity in the activation regime [J].

Ahmed, S. A. ;

Mohamed, S. H. .

JOURNAL OF MATERIALS SCIENCE, 2009, 44 (12) :3043-3048

[2] Electrical and thermoelectrical properties of Bi2Se3 grown by metal organic chemical vapour deposition technique [J].

Al Bayaz, A ;

Giani, A ;

Foucaran, A ;

Pascal-Delannoy, E ;

Boyer, A .

THIN SOLID FILMS, 2003, 441 (1-2) :1-5

[3] GROWTH AND MICROHARDNESS STUDIES OF CHALCOGENIDES OF ARSENIC, ANTIMONY AND BISMUTH [J].

ARIVUOLI, D ;

GNANAM, FD ;

RAMASAMY, P .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1988, 7 (07) :711-713

[4] ELECTRICAL AND OPTICAL PROPERTIES OF SOME M2V-BN3VI-B SEMICONDUCTORS [J].

BLACK, J ;

CONWELL, EM ;

SEIGLE, L ;

SPENCER, CW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (03) :240-251

[5]

Chen X., 2011, APPL PHYS LETT, V99

[6] Study on Transport Properties of Bi2Se3 Single Crystals Grown by Vapor Phase Technique [J].

Deshpande, M. P. ;

Chaki, Sunil H. ;

Pandya, Nilesh N. ;

Sakariya, Pallavi ;

Bhatt, Sandip V. .

SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY, 2012, 42 (10) :1418-1425

[7] OPTICAL-PROPERTIES OF SB2SE3 THIN-FILMS [J].

ELSHAIR, HT ;

IBRAHIM, AM ;

ELWAHABB, EA ;

AFIFY, MA ;

ELSALAM, FA .

VACUUM, 1991, 42 (14) :911-914

[8]

Gomis O., 2011, PHYS REV B, V84

[9] High pressure transport properties of the topological insulator Bi2Se3 [J].

Hamlin, J. J. ;

Jeffries, J. R. ;

Butch, N. P. ;

Syers, P. ;

Zocco, D. A. ;

Weir, S. T. ;

Vohra, Y. K. ;

Paglione, J. ;

Maple, M. B. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (03)

[10] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

← 1 2 3 4 5 →