Tunable Electrical Conductivity of Individual Graphene Oxide Sheets Reduced at "Low" Temperatures

被引：793

作者：

Jung, Inhwa ^{[2
]}

Dikin, Dmitriy A. ^{[1
]}

Piner, Richard D. ^{[2
]}

Ruoff, Rodney S. ^{[2
]}

机构：

[1] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA

[2] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 12期

关键词：

D O I：

10.1021/nl8019938

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125-240 degrees C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 106 times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.

引用

页码：4283 / 4287

页数：5

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