Diffusion and transport of spin pulses in an n-type semiconductor quantum well -: art. no. 113702

被引:19
作者
Jiang, L
Weng, MQ
Wu, MW [1 ]
Cheng, JL
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
基金
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词
D O I
10.1063/1.2136232
中图分类号
O59 [应用物理学];
学科分类号
摘要
We perform a theoretical investigation on the time evolution of spin pulses in an n-type GaAs (001) quantum well with and without external electric field at high temperatures by constructing and numerically solving the kinetic spin Bloch equations and the Poisson equation, with the electron-phonon, electron-impurity, and electron-electron Coulomb scatterings explicitly included. The effect of the Coulomb scattering, especially the effect of the Coulomb drag on the spin diffusion/transport is investigated and it is shown that the spin oscillations and spin polarization reverse along the direction of spin diffusion in the absence of the applied magnetic field, which were originally predicted in the absence of the Coulomb scattering by Weng and Wu [J. Appl. Phys. 93, 410 (2003)], can sustain the Coulomb scattering at high temperatures (similar to 200 K). The results obtained are consistent with a recent experiment in bulk GaAs but at a very low temperature (4 K) by Crooker and Smith [Phys. Rev. Lett. 94, 236601 (2005)]. (c) 2005 American Institute of Physics.
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页数:5
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