Coulomb interaction effects in spin-polarized transport

被引:66
作者
D'Amico, I
Vignale, G
机构
[1] Ist Nazl Fis Mat, I-10133 Turin, Italy
[2] Inst Sci Interchange, I-10133 Turin, Italy
[3] Univ Missouri, Dept Phys, Columbia, MO 65211 USA
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 08期
关键词
D O I
10.1103/PhysRevB.65.085109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the effect of the electron-electron interaction on the transport of spin-polarized currents in metals and doped semiconductors in the diffusive regime. In addition to well-known screening effects, we identify two additional effects, which depend on many-body correlations and exchange and reduce the spin-diffusion constant. The first is the "spin Coulomb drag" an intrinsic friction mechanism which operates whenever the average velocities of up-spin and down-spin electrons differ. The second arises from the decrease in the longitudinal spin stiffness of an interacting electron gas relative to a noninteracting one. Both effects are studied in detail for both degenerate and nondegenerate carriers in metals and semiconductors, and various limiting cases are worked out analytically. The behavior of the spin-diffusion constant at and below a ferromagnetic transition temperature is also discussed.
引用
收藏
页码:1 / 12
页数:12
相关论文
共 29 条
[1]   Electron spin and optical coherence in semiconductors [J].
Awschalom, DD ;
Kikkawa, JM .
PHYSICS TODAY, 1999, 52 (06) :33-38
[2]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[3]  
CEPERLEY DM, 1982, INT J QUANTUM CHEM, V16, P49
[4]   CONDUCTIVITY RELAXATION-TIME DUE TO ELECTRON-HOLE COLLISIONS IN OPTICALLY-EXCITED SEMICONDUCTORS [J].
COMBESCOT, M ;
COMBESCOT, R .
PHYSICAL REVIEW B, 1987, 35 (15) :7986-7992
[5]   Spin diffusion in doped semiconductors: The role of Coulomb interactions [J].
D'Amico, I ;
Vignale, G .
EUROPHYSICS LETTERS, 2001, 55 (04) :566-572
[6]   Theory of spin Coulomb drag in spin-polarized transport [J].
D'Amico, I ;
Vignale, G .
PHYSICAL REVIEW B, 2000, 62 (08) :4853-4857
[7]   Spin diffusion in semiconductors [J].
Flatté, ME ;
Byers, JM .
PHYSICAL REVIEW LETTERS, 2000, 84 (18) :4220-4223
[8]   CURRENT DRAG IN SEMICONDUCTOR-DEVICES [J].
HANSCH, W ;
MAHAN, GD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (07) :663-670
[9]  
HUANG K, 1987, STAT MACHANICS
[10]   SPIN-INJECTION EXPERIMENT [J].
JOHNSON, M ;
SILSBEE, RH .
PHYSICAL REVIEW B, 1988, 37 (10) :5326-5335