Electric current-induced spin orientation in quantum well structures

被引：69

作者：

Ganichev, SD

Danilov, SN

Schneider, P

Bel'kov, VV

Golub, LE ^{[1
]}

Wegseheider, W

Weiss, D

Prettl, W

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Regensburg, Fak Phys, D-93040 Regensburg, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 300卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

electric spin orientation; spin-orbit splitting; spin relaxation;

D O I：

10.1016/j.jmmm.2005.10.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A longstanding theoretical prediction is the orientation of spins by an electrical current flowing through low-dimensional carrier systems of sufficiently low crystallographic symmetry. Here we show by means of terahertz transmission experiments through two-dimensional hole systems a growing spin orientation with an increasing current at room and liquid nitrogen temperatures. (c) 2005 Published by Elsevier B.V.

引用

页码：127 / 131

页数：5

共 25 条

[1]

Aronov A. G., 1991, Soviet Physics - JETP, V73, P537

[2]

ARONOV AG, 1989, JETP LETT+, V50, P431

[3] Spin relaxation anisotropy in two-dimensional semiconductor systems [J].