The mechanics and physics of thin film decohesion and its measurement

被引：6

作者：

Bagchi, A ^{[1
]}

Evans, AG ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

INTERFACE SCIENCE | 1996年 / 3卷 / 03期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intent of this review is to utilize the mechanics of thin films in order to define quantitative procedures for predicting interface decohesion motivated by residual stress. The emphasis is on the role of the interface debond energy, especially methods for measuring this parameter in an accurate and reliable manner. Experimental results for metal films on dielectric substrates are reviewed and possible mechanisms are discussed.

引用

页码：169 / 193

页数：25

共 64 条

[1] ANALYSIS OF CRITICAL DEBONDING PRESSURES OF STRESSED THIN-FILMS IN THE BLISTER TEST [J].