A photoelectrochemical study of InxGa1-xN films

被引：13

作者：

Theuwis, A ^{[1
]}

Strubbe, K ^{[1
]}

Depestel, LM ^{[1
]}

Gomes, WP ^{[1
]}

机构：

[1] State Univ Ghent, Lab Fys Chem, B-9000 Ghent, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2002年 / 149卷 / 05期

关键词：

D O I：

10.1149/1.1468647

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The III-nitride semiconductor n-InxGa1-xN was investigated by optical absorbance and luminescence measurements and by various photoelectrochemical methods. Evidence is found for the presence of localized states and compositional fluctuations. Upon illumination with the appropriate wavelength and positive polarization in an indifferent electrolyte, i.e., aqueous 1 mol L-1 HCl, photocurrent flow is observed, resulting in the photoanodic etching of the solid. Measurements of the quantum efficiency Q and the transient photocurrent show that recombination of photogenerated charge carriers competes effectively with photoanodic dissolution. (C) 2002 The Electrochemical Society.

引用

页码：E173 / E178

页数：6

共 39 条

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