Persistent photoconductivity in InGaP/GaAs heterostructures

被引：13

作者：

Fan, JC ^{[1
]}

Wang, JC ^{[1
]}

Chen, YF ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 19期

关键词：

D O I：

10.1063/1.125207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconductivity spectra have been investigated in InGaP/GaAs heterostructures, and persistent photoconductivity (PPC) has been observed. Through a detailed study of the dependence on excitation wavelengths and the decay kinetics, we identify that the separation of electrons and holes due to the macroscopic potential barrier between the heterointerface and the substrate is the origin of the PPC effect. In addition, we found that the PPC effect can be reduced and the photosensitivity can be enhanced after hydrogenation. We suggest that this behavior can be interpreted by the fact that the incorporation of atomic hydrogen produces donor neutralization and passivates the activity of defective bonds, thus reducing the potential barrier for the recombination of electrons and holes and enhances the photoresponse. (C) 1999 American Institute of Physics. [S0003-6951(99)05645-4].

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页码：2978 / 2980

页数：3

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