The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures

被引：5

作者：

Fan, JC ^{[1
]}

Wang, JC ^{[1
]}

Chen, YF ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.123582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that hydrogen passivation by the photochemical vapor deposition method can have a significant influence on GaInP/GaAs heterostructures. The effect has been investigated by low-temperature photoluminescence and current-voltage and capacitance-voltage experiments. The photoluminescence measurement shows a strong increase in the luminescence intensity after hydrogenation. It is interpreted in terms of the passivation of nonradiative recombination defect centers by atomic hydrogen. The effect is also accompanied by a simultaneous decrease in the carrier concentration as shown from the capacitance-voltage measurements. In addition, the effect of hydrogenation is confirmed by the improvement of the Schottky-diode properties. These results provide concrete evidence to support the passivation of impurities and defects by atomic hydrogen in GaInP/GaAs heterostructures. (C) 1999 American Institute of Physics. [S0003-6951(99)04310-7].

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页码：1463 / 1465

页数：3

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