PHOTOLUMINESCENCE STUDY OF HYDROGEN PASSIVATION IN GAAS AND ALGAAS BY THE PHOTOCHEMICAL VAPOR-DEPOSITION SYSTEM

被引：19

作者：

CHEN, YF

TSAI, CS

CHANG, Y

机构：

[1] Physics Department, National Taiwan University, Taipei

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期

关键词：

D O I：

10.1063/1.103581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown for the first time that hydrogen passivation can be made by using a photochemical vapor deposition system. Unlike the common methods, this new method of hydrogenation has no electron or ion bombardment, thus the sample surface will not be damaged during processing. The effects of hydrogenation are confirmed by the enhancement of photoluminescence intensity. A strong increase in the luminescence intensity (a factor of 23) has been observed which is comparable to the results of rf glow discharge systems.

引用

页码：70 / 72

页数：3

共 8 条

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