Majority carrier traps in proton-irradiated GaInP

The majority carrier traps formed in p-GaInP following room temperature irradiation with 3.1 MeV protons have been investigated using deep level transient Fourier spectroscopy. The radiation damage consists of several closely spaced peaks, one of which may have existed in the as-grown material. Energy levels of three of these new traps are reported although in the presence of such closely spaced peaks the energy parameters could only be reliably measured after annealing was used to eliminate shoulder peaks. The spectrum and its annealing behavior are explainable in terms of GaP and InP levels being superimposed. Among the observed peaks, two of the radiation induced levels have been associated with a gallium vacancy defect and a phosphorous Frenkel. (C) 1998 American Institute of Physics. [S0003-6951(98)04450-7].