N+-P DIODES IN INP FORMED BY IMPLANTATION OF GE+ OR SE+ AND RAPID THERMAL ANNEALING

被引：5

作者：

KRINGHOJ, P

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90193-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N+-p InP diodes have been produced by ion implantation and rapid thermal annealing. The preparation procedure and the final diodes were characterized by secondary ion mass spectrometry, differential Hall/resistivity measurements, current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy.

引用

页码：315 / 318

页数：4

共 6 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].