SELENIUM IMPLANTATION IN INDIUM-PHOSPHIDE

被引：17

作者：

INADA, T ^{[1
]}

TAKA, S ^{[1
]}

YAMAMOTO, Y ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,TOKYO 184,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.329288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4863 / 4865

页数：3

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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 91 - 96
[7] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1525 - 1529
[8] OHMIC CONTACTS ON ION-IMPLANTED N-TYPE GAAS-LAYERS
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[9] INADA T, UNPUBLISHED
[10] ION-IMPLANTATION OF SULFUR IN CR-DOPED INP AT ROOM-TEMPERATURE
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