DUAL SPECIES ION-IMPLANTATION IN GAAS

被引：9

作者：

INADA, T ^{[1
]}

KATO, S ^{[1
]}

OHKUBO, T ^{[1
]}

HARA, T ^{[1
]}

机构：

[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 48卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209235

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：91 / 96

页数：6

共 19 条

[1] EFFECT OF DUAL IMPLANTS INTO GAAS
AMBRIDGE, T
HECKINGBOTTOM, R
BELL, EC
SEALY, BJ
STEPHENS, KG
SURRIDGE, RK
[J]. ELECTRONICS LETTERS, 1975, 11 (15) : 314 - 315
[2] AMBRIDGE T, 1973, RADIAT EFF, V17, P31
[3] ION-IMPLANTATION DAMAGE IN GAAS - TEM STUDY OF VARIATION WITH ION SPECIES AND STOICHIOMETRY
ELLIOTT, CR
AMBRIDGE, T
HECKINGBOTTOM, R
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (06) : 859 - 863
[4] SELENIUM IMPLANTATION IN GAAS
GAMO, K
INADA, T
KREKELER, S
MAYER, JW
EISEN, FH
WELCH, BM
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 213 - 217
[5] GIBBONS JF, 1975, PROJECTED RANGE STAT
[6] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION
HIGGINS, JA
KUVAS, RL
EISEN, FH
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 587 - 596
[7] GAAS HALL-EFFECT DEVICES FABRICATED BY ION-IMPLANTATION TECHNIQUE
INADA, T
OHKUBO, T
KATO, S
KITAHARA, M
KANDA, Y
HARA, T
[J]. ELECTRONICS LETTERS, 1978, 14 (16) : 503 - 505
[8] INADA T, 1978, J ELECTROCHEM SOC, V125, P1535
[9] INADA T, UNPUBLISHED
[10] FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY
LIDOW, A
GIBBONS, JF
DELINE, VR
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 149 - 151