OHMIC CONTACTS ON ION-IMPLANTED N-TYPE GAAS-LAYERS

被引：17

作者：

INADA, T ^{[1
]}

KATO, S ^{[1
]}

HARA, T ^{[1
]}

TOYODA, N ^{[1
]}

机构：

[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.326407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contact resistance of Ohmic electrodes formed on either Se- or (Se+Ga) -implanted n-type GaAs layers was studied. Experimental results have shown that a low specific-contact resistance of 2.9×10-7 Ω cm 2 can be achieved on GaAs layers having a maximum carrier concentration of 1.8×1019 cm-3, which have been formed by a dual-species (4.4×1014 cm-2 Se+ 5.0×1014 cm-2 Ga) implantation in Cr-doped semi-insulating GaAs heated to 400 °C and by subsequent annealing at 950 °C using an oxygen-free CVD Si3N4 layer as an encapsulant.

引用

页码：4466 / 4468

页数：3

共 10 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
[2] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
DONNELLY, JP
LINDLEY, WT
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43
[3] SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO GALLIUM-ARSENIDE
EDWARDS, WD
TORRENS, AB
HARTMAN, WA
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 387 - &
[4] SELENIUM IMPLANTATION IN GAAS
GAMO, K
INADA, T
KREKELER, S
MAYER, JW
EISEN, FH
WELCH, BM
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 213 - 217
[5] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE
INADA, T
OHKUBO, T
SAWADA, S
HARA, T
NAKAJIMA, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1525 - 1529
[6] ANNEALING OF SE-IMPLANTED GAAS WITH AN OXYGEN-FREE CVD SI3N4 ENCAPSULANT
INADA, T
MIWA, H
KATO, S
KOBAYASHI, E
HARA, T
MIHARA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) : 4571 - 4573
[7] INADA T, 1978, P INT C ION BEAM MOD
[8] IMPROVED GAAS MESFET WITH A THIN INSITU BUFFER GROWN BY LIQUID-PHASE EPITAXY
KIM, CK
MALBON, RM
OMORI, M
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 92 - 94
[9] OHATA K, 1978, IEEE T ELECTRON DEVI, V24, P1129
[10] Study of Encapsulants for Annealing GaAs
Vaidyanathan, K. V.
Helix, M. J.
Wolford, D. J.
Streetman, B. G.
Blattner, R. J.
Evans, C. A., Jr.
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1781 - 1784

← 1 →